logo
Enviar mensaje
Hogar > productos > CI de microcontrolador > F59L1G81LB IC de memoria flash NAND o SLC NAND F59L1G81LB-25TG2M

F59L1G81LB IC de memoria flash NAND o SLC NAND F59L1G81LB-25TG2M

fabricante:
ESMT (Elite Semiconductor Microelectronics Technology Inc.)
Descripción:
F59L1G81LB (2M) SLC NAND Flash x8 3,3 V ECC: 1 bit/528 bytes 25 ns 48 TSOPI/ 63 BGA/ 67 BGA
Categoría:
CI de microcontrolador
En existencia:
En stock
Precio:
Contact us
Forma de pago:
T/T
Método de envío:
expresar
Especificaciones
Nombre del producto:
F59L1G81LB Circuitos integrados de memoria flash SLC NAND F59L1G81LB-25TG2M
Descripción:
F59L1G81LB (2M) SLC NAND Flash x8 3,3 V ECC: 1 bit/528 bytes 25 ns 48 TSOPI/ 63 BGA/ 67 BGA
Categoría:
Circuitos integrados (CI) -F59L1G81LB
Paquete / Estuche:
48TSOPI/ 63BGA/ 67BGA
Temperatura de funcionamiento:
-40°C ~ 85°C (TA)
Tipo de montaje:
Montaje en superficie
fabricante:
ESMT
Número de producto básico:
F59L1G81LB
Números de pieza:
F59L1G81LB (2M) F59L1G81MB (2M) F59D1G81LB (2M) F59D1G161LB (2M) F59D1G81MB (2M) F59D1G161MB (2M)
Introducción

ICs de memoria flash NAND SLC F59L1G81LB F59L1G81LB-25TG2M

Descripción: F59L1G81LB (2M) SLC NAND Flash x8 3.3V ECC:1bit/528Byte 25ns 48TSOPI/ 63BGA/ 67BGA

 
Más ICs de memoria flash NAND SLC Número de pieza:
1Gb      
Número de pieza Descripción Velocidad (mhz) Paquete
F59L1G81LB (2M) Flash NAND SLC, x8, 3.3V, ECC:1bit/528Byte 25ns 48 pines TSOPI/ 63 bolas BGA/ 67 bolas BGA
F59L1G81MB (2M) Flash NAND SLC, x8, 3.3V, ECC:4bit/528Byte 25ns 48 pines TSOPI/ 63 bolas BGA/ 67 bolas BGA
F59D1G81LB (2M) Flash NAND SLC, x8, 1.8V, ECC:1bit/512Byte 45ns 48 pines TSOPI/ 63 bolas BGA/ 67 bolas BGA
F59D1G161LB (2M) Flash NAND SLC, x16, 1.8V, ECC:1bit/256Word 45ns 48 pines TSOPI/ 63 bolas BGA
F59D1G81MB (2M) Flash NAND SLC, x8, 1.8V, ECC:4bit/512Byte 45ns 48 pines TSOPI/ 63 bolas BGA/ 67 bolas BGA
F59D1G161MB (2M) Flash NAND SLC, x16, 1.8V, ECC:4bit/256Word 45ns 48 pines TSOPI/ 63 bolas BGA
       
2Gb      
Número de pieza Descripción Velocidad (mhz) Paquete
F59L2G81XA(2B) Flash NAND SLC, x8, 3.3V, 8bit /544 bytes 25ns 48 pines TSOPI/63 bolas BGA/67 bolas BGA
F59D2G81XA(2B) Flash NAND SLC, x8, 1.8V, 8bit /544 bytes 45ns 48 pines TSOP/ 63 bolas BGA
F59L2G81KA(2N) Flash NAND SLC, x8, 3.3V, ECC:8bit/512byte 25ns 48 pines TSOPI/ 63 bolas BGA/ 67 bolas BGA
F59D2G81KA(2N) Flash NAND SLC, x8, 1.8V, ECC:8bit/512Byte 45ns 48 pines TSOPI/ 63 bolas BGA/ 67 bolas BGA
       
4Gb      
Número de pieza Descripción Velocidad (mhz) Paquete
F59L4G81XB(2X) Flash NAND SLC, x8, 3.3V, ECC:8bit/ 512Byte 25ns 48 pines TSOPI/ 63 bolas BGA/ 67 bolas BGA
F59D4G81XB(2X) Flash NAND SLC, x8, 1.8V, ECC:8bit/ 512Byte 45ns 48 pines TSOPI/ 63 bolas BGA/ 67 bolas BGA
F59L4G81KA(2R) Flash NAND SLC, x8, 3.3V, ECC:8bit / 512Byte 25ns 48 pines TSOP/ 63 bolas BGA/ 67 bolas BGA
F59D4G81KA(2R) Flash NAND SLC, x8, 1.8V, ECC:8bit/ 512Byte 45ns 48 pines TSOPI/ 63 bolas BGA/ 67 bolas BGA
F59L4G161KA(2R) Flash NAND SLC, x16, 3.3V, ECC:8bit / 256words 25ns 67 bolas BGA
       
8Gb      
Número de pieza Descripción Velocidad (mhz) Paquete
F59L8G81XA(2Y) Flash NAND SLC, x8, 3.3V, ECC:8bit/540byte 25ns 48 pines TSOP/ 63 bolas BGA
F59L8G81KSA(2R) Flash NAND SLC, x8, 3.3V, ECC:8bit/512byte 25ns 48 pines TSOP/ 63 bolas BGA
F59D8G81KSA(2R) Flash NAND SLC, x8, 1.8V, ECC:8bit/512byte 45ns 48 pines TSOP/ 63 bolas BGA
F59D8G81KDA(2R) Flash NAND SLC, x8, 1.8V, ECC:8bit/512byte 45ns 48 pines TSOP/ 63 bolas BGA/ 67 bolas BGA
Aplicación:

Automotriz
Redes
Consumidor
Decodificador
Industrial
Pantalla
IOT
Vigilancia de seguridad
Dispositivos portátiles
Periféricos de PC

 

F59L1G81LB IC de memoria flash NAND o SLC NAND F59L1G81LB-25TG2MF59L1G81LB IC de memoria flash NAND o SLC NAND F59L1G81LB-25TG2M

 


 

 

 

F59L1G81LB IC de memoria flash NAND o SLC NAND F59L1G81LB-25TG2M

F59L1G81LB IC de memoria flash NAND o SLC NAND F59L1G81LB-25TG2M

F59L1G81LB IC de memoria flash NAND o SLC NAND F59L1G81LB-25TG2M

Elite Semiconductor Microelectronics Technology Inc. (ESMT) es una empresa profesional de diseño de IC, fundada en junio de 1998 en el Parque Industrial de Ciencias de Hsinchu, Taiwán. El negocio principal de la empresa incluye el diseño, la fabricación, la venta y los servicios técnicos de productos IC de marca propia. ESMT salió a bolsa con éxito en la Bolsa de Valores de Taiwán, código 3006, en marzo de 2002.

F59L1G81LB IC de memoria flash NAND o SLC NAND F59L1G81LB-25TG2MF59L1G81LB IC de memoria flash NAND o SLC NAND F59L1G81LB-25TG2M

 

Productos de memoria flash SPI NAND de ESMT más en stock:

SPI NAND      
1Gb      
Número de pieza Descripción Velocidad (mhz) Paquete
F50L1G41LB(2M) Flash NAND SPI, 3.3V 104MHz WSON de 8 contactos
F50D1G41LB(2M) Flash NAND SPI, 1.8V 50MHz WSON de 8 contactos
F50L1G41XA(2B) Flash NAND SPI, 3.3V 104MHz WSON de 8 contactos/ BGA de 24 bolas
       
2Gb      
Número de pieza Descripción Velocidad (mhz) Paquete
F50L2G41XA(2B) Flash NAND SPI, 3.3V 104MHz WSON de 8 contactos
F50L2G41XA (2BE) Flash NAND SPI, 3.3V 104MHz LGA de 8 contactos
F50D2G41XA(2BE) Flash NAND SPI, 1.8V 83MHz LGA de 8 contactos
F50D2G41XA(2B) Flash NAND SPI, 1.8V 83/ 104 MHz WSON de 8 contactos
       
4Gb      
Número de pieza Descripción Velocidad (mhz) Paquete
F50D4G41XB(2X) Flash NAND SPI 1.8V 83MHz LGA de 8 contactos
F50L4G41XB(2X) Flash NAND SPI, 3.3V 104MHz WSON de 8 contactos
F50D4G41XB(2XE) Flash NAND SPI 1.8V 83MHz LGA de 8 contactos
PRODUCTOS RELACIONADOS
FM6BD1G1GMB-1.8BLCE 1G+1G (Flash NAND + LPDDR2) FM6BD1G1GMB(2M) FM62D1G1GMB (2G) FM6BD1G1GMB (2G)

FM6BD1G1GMB-1.8BLCE 1G+1G (Flash NAND + LPDDR2) FM6BD1G1GMB(2M) FM62D1G1GMB (2G) FM6BD1G1GMB (2G)

FM6BD1G1GMB 1.8V 1Gb NAND Flash (128Mbx8) 1.8V 1Gb LPDDR2 SDRAM (32Mbx32) 45ns 400/533MHz 10.5x8 (mm) 162BGA
CI Flash NOR SPI EN25QX256A EN25QX256A-104HIP2S

CI Flash NOR SPI EN25QX256A EN25QX256A-104HIP2S

256Mb 2.7V - 3.6V 104MHz/133MHz SPI NOR Flash Memory IC
EN29LV800D(2A) EN29LV160D(2W) EN29LV320C (2Y) EN29LV320CB-70BIP

EN29LV800D(2A) EN29LV160D(2W) EN29LV320C (2Y) EN29LV320CB-70BIP

Parallel NOR 32Mb Flash Memory Boot Sector IC EN29LV320CB-70BIP
M55D1G3232A(2Y) M55D1G1664A (2Y) 4Gb M55D4G16256A(2R) M55D4G32128A(2R) 2Gb M56Z2G16128A (2R) 4Gb M56Z4G16256A(2H) M56Z4G32128A (2R) 8Gb M56Z8G32256A M56Z8G32256A (2H)

M55D1G3232A(2Y) M55D1G1664A (2Y) 4Gb M55D4G16256A(2R) M55D4G32128A(2R) 2Gb M56Z2G16128A (2R) 4Gb M56Z4G16256A(2H) M56Z4G32128A (2R) 8Gb M56Z8G32256A M56Z8G32256A (2H)

LPDDR3 SDRAM LPDDR4x SDRAM M55D4G32128A-GFB
M52D64322AK1AG M52D5123216A M52D5121632A M52D2561616A(2F) M52D256328A(2F) LPSDR SDRAM IC

M52D64322AK1AG M52D5123216A M52D5121632A M52D2561616A(2F) M52D256328A(2F) LPSDR SDRAM IC

M52D64322A 2Mbx32 1.8V 4K 166MHz 54FBGA LPSDR SDRAM IC
M53D64164A (2C) M13D64322A (2S) M53D2561616A (2F) M53D256328A (2F) M53D5121632A M53D5123216A M53D1G1664A M53D1G3232A

M53D64164A (2C) M13D64322A (2S) M53D2561616A (2F) M53D256328A (2F) M53D5121632A M53D5123216A M53D1G1664A M53D1G3232A

M53D5123216A 16Mbx32 1.8V 8K 200MHz 144FBGA LPDDR SDRAM IC M53D5123216A-5B
M16U4G16256A-KJBG2Z M16U4G16256A-QLBG2Z

M16U4G16256A-KJBG2Z M16U4G16256A-QLBG2Z

4Gb 256Mbx16 1.2V 1333/1600MHz DDR4 SDRAM M16U4G16256A M16U4G8512A 96BGA IC
128 MB de memoria RAM DDR SDRAM M13S128168A-5TG M13S128168A-6T M13S128168A-4T

128 MB de memoria RAM DDR SDRAM M13S128168A-5TG M13S128168A-6T M13S128168A-4T

M13S128168A (2S) 8Mbx16 2.5V 4K 160/200/250MHz 66TSOPII/ 60BGA DDR SDRAM IC
M13S64164A-5TG M13S64164A-5T IC DRAM DDR SDRAM de 64MB

M13S64164A-5TG M13S64164A-5T IC DRAM DDR SDRAM de 64MB

M13S64164A(2C) 64Mb 4Mbx16 DDR SDRAM 2.5V 4K 166/200/250MHz 66TSOPII IC
M12L5121632A-6TG2T 166MHz TSOP M12L5121632A-7TG2T 143MHz TSOP54 M12L5121632A-5BG2T 200MHz BGA M12L5121632A-6BG2T 166MHz BGA M12L5121632A-7BG2T 143MHz BGA

M12L5121632A-6TG2T 166MHz TSOP M12L5121632A-7TG2T 143MHz TSOP54 M12L5121632A-5BG2T 200MHz BGA M12L5121632A-6BG2T 166MHz BGA M12L5121632A-7BG2T 143MHz BGA

M12L5121632A 32Mbx16 SDRAM 3.3V 8K 143/166/200MHz 54pin TSOPII/54FBGA IC M12L5121632A-5TG2T
M13S64164A-5TG M13S64164A-5T M13S64164A(2C) ESMT DRAM DDR SDRAM IC de memoria

M13S64164A-5TG M13S64164A-5T M13S64164A(2C) ESMT DRAM DDR SDRAM IC de memoria

ESMT DRAM DDR SDRAM Memory IC M13S64164A(2C) 4Mbx16 DDR SDRAM 2.5V 4K 166/200/250MHz
M12L2561616A-6TG2T M12L2561616A-6BIG2S ESMT SDRAM 3,3 V memoria IC

M12L2561616A-6TG2T M12L2561616A-6BIG2S ESMT SDRAM 3,3 V memoria IC

M12L2561616A (2T) M12L16161A (2R) M12L16164A M12L64322A M12L128168A M12L5121632ASDRAM
Imagen parte # Descripción
FM6BD1G1GMB-1.8BLCE 1G+1G (Flash NAND + LPDDR2) FM6BD1G1GMB(2M) FM62D1G1GMB (2G) FM6BD1G1GMB (2G)

FM6BD1G1GMB-1.8BLCE 1G+1G (Flash NAND + LPDDR2) FM6BD1G1GMB(2M) FM62D1G1GMB (2G) FM6BD1G1GMB (2G)

FM6BD1G1GMB 1.8V 1Gb NAND Flash (128Mbx8) 1.8V 1Gb LPDDR2 SDRAM (32Mbx32) 45ns 400/533MHz 10.5x8 (mm) 162BGA
CI Flash NOR SPI EN25QX256A EN25QX256A-104HIP2S

CI Flash NOR SPI EN25QX256A EN25QX256A-104HIP2S

256Mb 2.7V - 3.6V 104MHz/133MHz SPI NOR Flash Memory IC
EN29LV800D(2A) EN29LV160D(2W) EN29LV320C (2Y) EN29LV320CB-70BIP

EN29LV800D(2A) EN29LV160D(2W) EN29LV320C (2Y) EN29LV320CB-70BIP

Parallel NOR 32Mb Flash Memory Boot Sector IC EN29LV320CB-70BIP
M55D1G3232A(2Y) M55D1G1664A (2Y) 4Gb M55D4G16256A(2R) M55D4G32128A(2R) 2Gb M56Z2G16128A (2R) 4Gb M56Z4G16256A(2H) M56Z4G32128A (2R) 8Gb M56Z8G32256A M56Z8G32256A (2H)

M55D1G3232A(2Y) M55D1G1664A (2Y) 4Gb M55D4G16256A(2R) M55D4G32128A(2R) 2Gb M56Z2G16128A (2R) 4Gb M56Z4G16256A(2H) M56Z4G32128A (2R) 8Gb M56Z8G32256A M56Z8G32256A (2H)

LPDDR3 SDRAM LPDDR4x SDRAM M55D4G32128A-GFB
M52D64322AK1AG M52D5123216A M52D5121632A M52D2561616A(2F) M52D256328A(2F) LPSDR SDRAM IC

M52D64322AK1AG M52D5123216A M52D5121632A M52D2561616A(2F) M52D256328A(2F) LPSDR SDRAM IC

M52D64322A 2Mbx32 1.8V 4K 166MHz 54FBGA LPSDR SDRAM IC
M53D64164A (2C) M13D64322A (2S) M53D2561616A (2F) M53D256328A (2F) M53D5121632A M53D5123216A M53D1G1664A M53D1G3232A

M53D64164A (2C) M13D64322A (2S) M53D2561616A (2F) M53D256328A (2F) M53D5121632A M53D5123216A M53D1G1664A M53D1G3232A

M53D5123216A 16Mbx32 1.8V 8K 200MHz 144FBGA LPDDR SDRAM IC M53D5123216A-5B
M16U4G16256A-KJBG2Z M16U4G16256A-QLBG2Z

M16U4G16256A-KJBG2Z M16U4G16256A-QLBG2Z

4Gb 256Mbx16 1.2V 1333/1600MHz DDR4 SDRAM M16U4G16256A M16U4G8512A 96BGA IC
128 MB de memoria RAM DDR SDRAM M13S128168A-5TG M13S128168A-6T M13S128168A-4T

128 MB de memoria RAM DDR SDRAM M13S128168A-5TG M13S128168A-6T M13S128168A-4T

M13S128168A (2S) 8Mbx16 2.5V 4K 160/200/250MHz 66TSOPII/ 60BGA DDR SDRAM IC
M13S64164A-5TG M13S64164A-5T IC DRAM DDR SDRAM de 64MB

M13S64164A-5TG M13S64164A-5T IC DRAM DDR SDRAM de 64MB

M13S64164A(2C) 64Mb 4Mbx16 DDR SDRAM 2.5V 4K 166/200/250MHz 66TSOPII IC
M12L5121632A-6TG2T 166MHz TSOP M12L5121632A-7TG2T 143MHz TSOP54 M12L5121632A-5BG2T 200MHz BGA M12L5121632A-6BG2T 166MHz BGA M12L5121632A-7BG2T 143MHz BGA

M12L5121632A-6TG2T 166MHz TSOP M12L5121632A-7TG2T 143MHz TSOP54 M12L5121632A-5BG2T 200MHz BGA M12L5121632A-6BG2T 166MHz BGA M12L5121632A-7BG2T 143MHz BGA

M12L5121632A 32Mbx16 SDRAM 3.3V 8K 143/166/200MHz 54pin TSOPII/54FBGA IC M12L5121632A-5TG2T
M13S64164A-5TG M13S64164A-5T M13S64164A(2C) ESMT DRAM DDR SDRAM IC de memoria

M13S64164A-5TG M13S64164A-5T M13S64164A(2C) ESMT DRAM DDR SDRAM IC de memoria

ESMT DRAM DDR SDRAM Memory IC M13S64164A(2C) 4Mbx16 DDR SDRAM 2.5V 4K 166/200/250MHz
M12L2561616A-6TG2T M12L2561616A-6BIG2S ESMT SDRAM 3,3 V memoria IC

M12L2561616A-6TG2T M12L2561616A-6BIG2S ESMT SDRAM 3,3 V memoria IC

M12L2561616A (2T) M12L16161A (2R) M12L16164A M12L64322A M12L128168A M12L5121632ASDRAM
Envíe el RFQ
Común:
In Stock
Cuota de producción:
10pieces